? 2000 ixys all rights reserved 1 - 2 i rms = 140 a v rrm = 800-1600 v v rsm v rrm type v dsm v drm vv 800 800 mmo 140-08io7 mlo 140-08io7 1200 1200 mmo 140-12io7 mlo 140-12io7 1600 1600 mmo 140-16io7 mlo 140-16io7 features ? thyristor controller for ac (circuit w1c acc. to iec) for mains frequency isolation voltage 3000 v~ planar glass passivated chips low forward voltage drop lead suitable for pc board solering applications switching and control of single and three phase ac circuits light and temperature control softstart ac motor controller solid state switches advantages easy to mount with two screws space and weight savings improved temperature and power cycling high power density small and light weight mmo 140 mlo 140 symbol conditions maximum ratings i rms t c = 85c, 50 - 400 hz, (per single controller) 130 a i trms 90 a i tavm t c = 85c; 180 sine, per thyristor 58 a i tsm t vj = 45c t = 10 ms (50 hz), sine 1150 a v r = 0 t = 8.3 ms (60 hz), sine 1230 a t vj = 125c t = 10 ms (50 hz), sine 1000 a v r = 0 t = 8.3 ms (60 hz), sine 1070 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 6600 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 6280 a 2 s t vj = 125c t = 10 ms (50 hz), sine 5000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 4750 a 2 s (di/dt) cr t vj = 125c repetitive, i t = 60 a 150 a/s f = 50 hz, t p = 200 s v d = 2 / 3 v drm i g = 0.45 a non repetitive, i t = i tavm 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = 125c; v dr = 2 / 3 v drm 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = 125c t p = 30 s 10 w i t = i tavm t p = 300 s 5 w p gavm 0.5 w v rgm 10 v t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m4) 1.5...2.0/14...18 nm/lb.in. weight typ. 18 g i / h g / f g / f i / h a n n w1c w1h ac controller modules preliminary data data according to iec 60747 and to a single thyristor/diode unless otherwise stated. ixys reserves the right to change limits, test conditions and dimensions. 008
? 2000 ixys all rights reserved 2 - 2 symbol conditions characteristic values i d , i r t vj = 125c; v r = v rrm ; v d = v drm 5ma v t i t = 200 a; t vj = 25c 1.75 v v t0 for power-loss calculations only 0.85 v r t 5.2 m v gt v d = 6 v t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v t vj = 25c 100 ma t vj = -40c 200 ma v gd t vj = 125c; v d = 2 / 3 v drm 0.2 v i gd 10 ma i l t vj = 25c; t p = 10 s 450 ma i g = 0.45 a; di g /dt = 0.45 a/s i h t vj = 25c; v d = 6 v; r gk = 200 ma t gd t vj = 25c; v d = ? v drm 2s i g = 0.45 a; di g /dt = 0.45 a/s r thjc per thyristor; dc 0.7 k/w per module 0.35 k/w r thch per thyristor; sine 180 el typ. 0.12 k/w per module typ. 0.06 k/w d s creeping distance on surface 11.2 mm d a creepage distance in air 17.0 mm a max. allowable acceleration 50 m/s 2 mmo 140 mlo 140 10 100 1000 1 10 100 1000 10 0 10 1 10 2 10 3 10 4 0.1 1 10 i g v g ma ma i g 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c s t gd v 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125 c 3 4 2 1 5 6 limit typ. t vj = 25 c fig. 1 gate trigger characteristics fig. 2 gate trigger delay time dimensions in mm (1 mm = 0.0394")
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